PART |
Description |
Maker |
BD828-10 BD826-6 BD826-16 BD830-10 |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-202 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-202 SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35uA 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 1.5AI(丙)|02
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Analog Devices, Inc.
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R216CH12FKO R216CH12CJO R216CH12CHO R325CH02CJO R3 |
879.2 A, 1200 V, SCR, TO-200AB 1852.6 A, 200 V, SCR 1891.85 A, 1800 V, SCR 1271.7 A, 200 V, SCR, TO-200AC 1271.7 A, 400 V, SCR, TO-200AC 1271.7 A, 600 V, SCR, TO-200AC 1271.7 A, 1000 V, SCR, TO-200AC 1271.7 A, 800 V, SCR, TO-200AC 1998.61 A, 1200 V, SCR
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Westcode Semiconductors, Ltd. WESTCODE SEMICONDUCTORS LTD
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HD-15531883 HD-15531/883 |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:30V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:50uA Multiconductor Cable; Number of Conductors:6; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:FRPE - Flame Retardant Polyethylene; Leaded Process Compatible:Yes; Capacitance:17uF; Conductor Material:Copper RoHS Compliant: Yes
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Intersil Corporation
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MCR101G-X-XX-T92-K MCR101G-X-XX-T92-B MCR101-6-B-T |
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS 0.8 A, 400 V, SCR, TO-92 0.8 A, 600 V, SCR, TO-92 0.8 A, 200 V, SCR, TO-92
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UNISONIC TECHNOLOGIES CO LTD
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CS218I-50PBLEADFREE CS218I-50DLEADFREE CS218I-50PL |
50 A, 1200 V, SCR, TO-218 50 A, 400 V, SCR, TO-218 50 A, 1000 V, SCR, TO-218 50 A, 800 V, SCR, TO-218 50 A, 200 V, SCR, TO-218 Internally Trimmed Precision IC Multiplier 55 A, 400 V, SCR, TO-218 Internally Trimmed Precision IC Multiplier 55 A, 1000 V, SCR, TO-218 63 A, 1200 V, SCR, TO-65 63 A, 600 V, SCR, TO-65 63 A, 200 V, SCR, TO-65 110 A, SCR, TO-83
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Central Semiconductor, Corp. CENTRAL SEMICONDUCTOR CORP
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R216CH12 R325CH02 R800CH04 |
1125 A, 1200 V, SCR 2398 A, 200 V, SCR 5260 A, 400 V, SCR
|
Westcode Semiconductors, Ltd. WESTCODE SEMICONDUCTORS LTD
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2N5064AP T107E141 S0510LS253V S1008LS253V EC103A75 |
0.8 A, 200 V, SCR, TO-92 4 A, 500 V, SCR 10 A, 50 V, SCR, TO-220AB 8 A, 100 V, SCR, TO-220AB 0.8 A, 100 V, SCR, TO-92 6 A, 50 V, SCR, TO-220AB 6 A, 100 V, SCR, TO-220AB 4 A, 300 V, SCR, TO-202AB 8 A, 50 V, SCR, TO-202AB 4 A, 50 V, SCR, TO-202AB 10 A, 100 V, SCR, TO-220AB
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50RIA40M 50RIA40S90 50RIA120 50RIA80S90M 50RIA 50R |
100V 50A Phase Control SCR in a TO-208AC (TO-65) package 800V 50A Phase Control SCR in a TO-208AC (TO-65) package 1000V 50A Phase Control SCR in a TO-208AC (TO-65) package 400V 50A Phase Control SCR in a TO-208AC (TO-65) package 1600V 80A Phase Control SCR in a TO-208AC (TO-65) package 1200V 50A Phase Control SCR in a TO-208AC (TO-65) package 1400V 80A Phase Control SCR in a TO-208AC (TO-65) package 600V 50A Phase Control SCR in a TO-208AC (TO-65) package MEDIUM POWER THYRISTORS Silicon Controlled Rectifier, 80 A, 1600 V, SCR, TO-208AC, TO-65, 2 PIN
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IRF[International Rectifier] Vishay Semiconductors
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STU8NB90 6380 |
N-CHANNEL 900V - 0.7 Ohm - 8.9A - Max220 PowerMESH MOSFET OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N-CHANNEL 900V - 0.7 - 8.9A - Max220 PowerMESH TM MOSFET N-CHANNEL 900V - 0.7ohm - 8.9A - Max220 PowerMESH MOSFET From old datasheet system
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
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IRFBF20 |
900V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)
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IRF[International Rectifier]
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